Josephson effects in MgB2 meta masked ion damage junctions
D. -J. Kang, N. H. Peng, R. Webb, C. Jeynes, J. H. Yun, S. H. Moon, D. Oh, G. Burnell, E. J. Tarte, D. F. Moore, M. G. Blamire
arXiv:cond-mat/0206207 · DOI 10.1109/TASC.2003.814157 · 2002-06-12 · arXiv: Superconductivity
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Abstract
Ion beam damage combined with nanoscale focused ion beam direct milling was used to create manufacturable SNS type Josephson junctions in 100 nm thick MgB$_{2}$ with T$_{C}$ of 38 K. The junctions show non-hysteretic current - voltage characteristics between 36 and 4.2 K. Experimental evidence for the dc and ac Josephson effects in MgB$_{2}$ metal masked ion damage junctions are presented. This technique is particularly useful for prototyping devices due to its simplicity and flexibility of fabrication and has a great potential for high-density integration.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| MgB2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 38 | Pressure not reported | unknown |
| MgB2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 39 | Pressure not reported | unknown |
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