Single domain transport measurements of C60 films
S. Rogge, M. Durkut, T. M. Klapwijk
arXiv:cond-mat/0206221 · DOI 10.1103/PhysRevB.67.033410 · 2002-06-13 · Physical Review B
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Abstract
Thin films of potassium doped C60, an organic semiconductor, have been grown on silicon. The films were grown in ultra-high vacuum by thermal evaporation of C60 onto oxide-terminated silicon as well as reconstructed Si(111). The substrate termination had a drastic influence on the C60 growth mode which is directly reflected in the electrical properties of the films. Measured on the single domain length scale, these films revealed resistivities comparable to bulk single crystals. In situ electrical transport properties were correlated to the morphology of the film determined by scanning tunneling microscopy. The observed excess conductivity above the superconducting transition can be attributed to two-dimensional fluctuations.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| K3C60 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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