Substitution induced pinning in MgB_2 superconductor doped with SiC nano-particles
S. X. Dou, A. V. Pan, S. Zhou, M. Ionescu, H. K. Liu, P. R. Munroe
arXiv:cond-mat/0206444 · DOI 10.1088/0953-2048/15/11/317 · 2002-06-24 · Superconductor Science and Technology
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Abstract
By doping MgB_2 superconductor with SiC nano-particles, we have successfully introduced pinning sites directly into the crystal lattice of MgB_2 grains (intra-grain pinning). It became possible due to the combination of counter-balanced Si and C co-substitution for B, leading to a large number of intra-granular dislocations and the dispersed nano-size impurities induced by the substitution. The magnetic field dependence of the critical current density was significantly improved in a wide temperature range, whereas the transition temperature in the sample MgB_2(SiC)_x having x = 0.34, the highest doping level prepared, dropped only by 2.6 K.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| MgB2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 38.6 | Pressure not reported | onset |
| MgB2(SiC)0.057 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 37.8 | Pressure not reported | onset |
| MgB2(SiC)0.115 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 37.4 | Pressure not reported | onset |
| MgB2(SiC)0.23 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 36.9 | Pressure not reported | onset |
| MgB2(SiC)0.34 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 36 | Pressure not reported | onset |
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