The superconducting gap of \QTR{em}{in situ} $MgB_{2}$ thin films by microwave surface impedance measurements
N. Hakim, C. Kusko, S. Sridhar, A. Soukiassian, X. H. Zeng, X. X. Xi, .
arXiv:cond-mat/0212009 · DOI 10.1063/1.1517181 · 2002-12-01 · Applied Physics Letters
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Abstract
Precision measurements of the microwave surface resistance $R_{s}$ of in situ $MgB_{2}$ films directly reveal an exponential behavior of $R_{s}$ at low temperature indicating a fully-gapped order parameter. The entire temperature dependence of $R_{s}$ is well described by a Mattis-Bardeen formalism but with a small gap ratio of $Δ(0)/kT_{c}=0.72$, corresponding to $Δ(0)=1.9meV$.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| MgB2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 31 | Pressure not reported | unknown |
| MgB2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 34 | Pressure not reported | zero_resistance |
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