Josephson transport through a Hubbard impurity center

V. I. Kozub; A. V. Lopatin; V. M. Vinokur

doi:10.1103/PhysRevLett.90.226805

← Back to search

Josephson transport through a Hubbard impurity center

V. I. Kozub, A. V. Lopatin, V. M. Vinokur

arXiv:cond-mat/0212537 · DOI 10.1103/PhysRevLett.90.226805 · 2002-12-20 · Physical review letters

T3experimental5 citations

Active bibliographic source — not scientific approval

Bibliographic access preserves source history; it does not approve extracted materials or validate reported claims. Review warnings on each occurrence separately.

Abstract

We investigate the Josephson transport through a thin semiconductor barrier containing impurity centers with the on-site Hubbard interaction $u$ of an arbitrary sign and strength. We find that in the case of the repulsive interaction the Josephson current changes sign with the temperature increase if the energy of the impurity level $ε$ (measured from the Fermi energy of superconductors) falls in the interval $(-u,0)$. We predict strong temporal fluctuations of the current if only a few centers present within the junction. In the case of the attractive impurity potential ($u<0$) and at low temperatures, the model is reduced to the effective two level Hamiltonian allowing thus a simple description of the nonstationary Josephson effect in terms of pair tunneling processes.