Effect of symmetry of the electron states of HTSC on the current-voltage characteristics of SIS junctions

P. I. Arseev; N. K. Fedorov; S. O. Loiko

doi:10.1134/1.1458489

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Effect of symmetry of the electron states of HTSC on the current-voltage characteristics of SIS junctions

P. I. Arseev, N. K. Fedorov, S. O. Loiko

arXiv:cond-mat/0304525 · DOI 10.1134/1.1458489 · 2003-04-23 · Journal of Experimental and Theoretical Physics

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Abstract

The current-voltage $IV$ characteristics of $SIS$ junctions are calculated in the framework of a multiband model with an anisotropic effective order parameter of HTSC. The results of calculations show that the shape of $IV$ characteristic and the density of electron states changes significantly depending on the parameters of the model. A theoretical explanation is proposed for the experimentally observed $s$-like behavior of the $IV$ characteristics of $SIN$ and $SIS$ junctions with BSCCO-type superconductors. The dependence of the superconducting peaks asymmetry on the mutual arrangement of the bands is analyzed. The difference between the obtained results and the results of single-band models with the $s$ and $d$ symmetries of the order parameter is discussed.