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Electronic Transport through YBCO Grain Boundary Interfaces between 4.2 K and 300 K

C. W. Schneider, S. Hembacher, G. Hammerl, R. Held, A. Schmehl, A. Weber, T. Kopp, J. Mannhart

arXiv:cond-mat/0307470 · DOI 10.1103/PhysRevLett.92.257003 · 2003-07-18 · Physical Review Letters

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Abstract

The current-induced dissipation in YBCO grain boundary tunnel junctions has been measured between 4.2 K and 300 K. It is found that the resistance of 45 degree (100)/(110) junctions decreases linearly by a factor of four when their temperature is increased from 100 K to 300 K. At the superconducting transition temperature Tc the grain boundary resistance of the normal state and of the superconducting state extrapolate to the same value.

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