High critical fields in MgB2 thin films with various resistivity values
V. Ferrando, C. Tarantini, P. Manfrinetti, D. Marre', M. Putti, A. Tumino, C. Ferdeghini
arXiv:cond-mat/0309543 · 2003-09-24
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Abstract
In this paper, we analyze the upper critical field of four MgB2 thin films, with different resistivity (between 5 to 50 mWcm) and critical temperature (between 29.5 to 38.8 K), measured up to 28 Tesla. In the perpendicular direction the critical fields vary from 13 to 24 T and we can estimate 42-57 T range in other direction. We observe linear temperature dependence even at low temperatures without saturation, in contrast to BCS theory. Considering the multiband nature of the superconductivity in MgB2, we conclude that two different scattering mechanisms influence separately resistivity and critical field. In this framework, resistivity values have been calculated from Hc2(T) curves and compared with the measured ones.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| MgB2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 29.5 | Pressure not reported | unknown |
| MgB2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 38.8 | Pressure not reported | unknown |
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