Field-Induced Resistive Switching in Metal-Oxide Interfaces

S. Tsui; A. Baikalov; J. Cmaidalka; Y. Y. Sun; Y. Q. Wang; Y. Y. Xue; C. W. Chu; L. Chen; A. J. Jacobson

doi:10.1063/1.1768305

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Field-Induced Resistive Switching in Metal-Oxide Interfaces

S. Tsui, A. Baikalov, J. Cmaidalka, Y. Y. Sun, Y. Q. Wang, Y. Y. Xue, C. W. Chu, L. Chen, A. J. Jacobson

arXiv:cond-mat/0402687 · DOI 10.1063/1.1768305 · 2004-02-27 · Applied Physics Letters

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Abstract

We investigate the polarity-dependent field-induced resistive switching phenomenon driven by electric pulses in perovskite oxides. Our data show that the switching is a common occurrence restricted to an interfacial layer between a deposited metal electrode and the oxide. We determine through impedance spectroscopy that the interfacial layer is no thicker than 10 nm and that the switch is accompanied by a small capacitance increase associated with charge accumulation. Based on interfacial I-V characterization and measurement of the temperature dependence of the resistance, we propose that a field-created crystalline defect mechanism, which is controllable for devices, drives the switch.