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Three-dimensional MgB$_{2}$-type superconductivity in hole-doped diamond

Lilia Boeri, Jens Kortus, O. K. Andersen

arXiv:cond-mat/0404447 · DOI 10.1103/PhysRevLett.93.237002 · 2004-04-19 · Physical review letters

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Abstract

We substantiate by calculations that the recently discovered superconductivity below 4 K in 3% boron-doped diamond is caused by electron-phonon coupling of the same type as in MgB$_2$, albeit in 3 dimensions. Holes at the top of the zone-centered, degenerate $σ$-bonding valence band couple strongly to the optical bond-stretching modes. The increase from 2 to 3 dimensions reduces the mode-softening crucial for $T_{c}$ reaching 40 K in MgB$_{2}.$ Even if diamond had the same \emph{bare} coupling constant as MgB$_{2},$ which could be achieved with 10% doping, $T_{c}$ would only be 25 K. Superconductivity above 1 K in Si (Ge) requires hole-doping beyond 5% (10%).

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
MgB2

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40Pressure not reportedunknown
MgB2

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45Pressure not reportedunknown
Si

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0.3Pressure not reportedunknown
Si

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3Pressure not reportedunknown
Ge

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0.4Pressure not reportedunknown

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