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Pressure effect on the in-plane magnetic penetration depth in YBa_2Cu_4O_8

R. Khasanov, J. Karpinski, H. Keller

arXiv:cond-mat/0405643 · DOI 10.1088/0953-8984/17/15/016 · 2004-05-27 · Journal of Physics: Condensed Matter

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Abstract

We report a study of the pressure effect (PE) on the in-plane magnetic field penetration depth lambda_{ab} in YBa_2Cu_4O_8 by means of Meissner fraction measurements. A pronounced PE on lambda_{ab}^{-2}(0) was observed with a maximum relative shift of Δλ^{-2}_{ab}/λ^{-2}_{ab}= 44(3)% at a pressure of 10.2 kbar. It arises from the pressure dependence of the effective in-plane charge carrier mass and pressure induced charge carrier transfer from the CuO chains to the superconducting CuO_2 planes. The present results imply that the charge carriers in YBa_2Cu_4O_8 are coupled to the lattice.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
YBa2Cu4O8

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80.05Pressure unresolvedonset
YBa2Cu4O8

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82.260.429 GPaonset
YBa2Cu4O8

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83.770.752 GPaonset
YBa2Cu4O8

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85.221.02 GPaonset

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