Quantum point contact conductance in NINS junctions

William J. Herrera; J. Virgilio Niño; J. Jairo Giraldo

doi:10.1103/PhysRevB.71.094515

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Quantum point contact conductance in NINS junctions

William J. Herrera, J. Virgilio Niño, J. Jairo Giraldo

arXiv:cond-mat/0406060 · DOI 10.1103/PhysRevB.71.094515 · 2004-06-02 · Physical Review B

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Abstract

The effect of an insulating barrier located at a distance $a$ from a NS quantum point contact is analyzed in this work. The Bogoliubov de Gennes equations are solved for NINS junctions (S: anysotropic superconductor, I: insulator and N: normal metal), where the NIN region is a quantum wire. For $% a\neq0$, bound states and resonances in the differential conductance are predicted. These resonances depend on the symmetry of the pair potential, the strength of the insulating barrier and $a $. Our results show that in a NINS quantum point contact the number of resonances vary with the symmetry of the order parameter. This is to be contrasted with the results for the NINS junction, in which only the position of the resonances changes with the symmetry.