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Imaging nano-scale electronic inhomogeneity in lightly doped Mott insulator Ca_{2-x}Na_{x}CuO_{2}Cl_{2}

Y. Kohsaka, K. Iwaya, S. Satow, T. Hanaguri, M. Azuma, M. Takano, H. Takagi

arXiv:cond-mat/0406089 · DOI 10.1103/PhysRevLett.93.097004 · 2004-06-03 · Physical review letters

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Abstract

The spatial variation of electronic states was imaged in the lightly doped Mott insulator Ca_{2-x}Na_{x}CuO_{2}Cl_{2} using scanning tunneling microscopy / spectroscopy (STM/STS). We observed nano-scale domains with a high local density of states within an insulating background. The observed domains have a characteristic length scale of 2 nm (~4-5a, a:lattice constant) with preferred orientations along the tetragonal [100] direction. We argue that such spatially inhomogeneous electronic states are inherent to slightly doped Mott insulators and play an important role for the insulator to metal transition.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
Bi2Sr2CaCu2Oy

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—Pressure not reportedunknown
Ca2-xNaxCuO2Cl2

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—Pressure not reportedunknown
Ca2-xNaxCuO2Cl2

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13Pressure unresolvedunknown

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