Remarkable change of tunneling conductance in YBCO films in fields up to 32.4T
R. Beck, Y. Dagan, A. Milner, G. Leibovitch, A. Gerber, R. G. Mints, G. Deutscher
arXiv:cond-mat/0407199 · DOI 10.1103/PhysRevB.72.104505 · 2004-07-08
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Abstract
We studied the tunneling density of states in YBCO films under strong currents flowing along node directions. The currents were induced by fields of up to 32.4T parallel to the film surface and perpendicular to the $CuO_{2}$ planes. We observed a remarkable change in the tunneling conductance at high fields where the gap-like feature shifts discontinuously from 15meV to a lower bias of 11meV, becoming more pronounced as the field increases. The effect takes place in increasing fields around 9T and the transition back to the initial state occurs around 5T in decreasing fields. We argue that this transition is driven by surface currents induced by the applied magnetic field.
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