Thin-Film Aluminum Microstructure as a Hot-Electron Microwave Radiation Detector
I. Yu. Borisenko, V. I. Kuznetsov, V. A. Tulin, D. Esteve
arXiv:cond-mat/0407636 · DOI 10.1023/A:1004646625994 · 2004-07-23 · Journal of Low Temperature Physics
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Abstract
We have found that the thin film aluminum structures shaped into a chain of micron sized islands connected by narrow isthmuses, can modify their electrical and structural properties under microwave radiation. As a result, at the temperature of 4.2 K the film structures turn into a kind of lateral periodic structure N-S-N, where N is for normal islands, S is for superconducting isthmuses. Current-voltage characteristics of the samples, as well as changes of these characteristics under low power radiation, have been studied over the temperature range from 1.3 to 10 K. The sensitivity of a structure as a microwave detector runs 10^{5} V/W.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Al Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 4.2 | Pressure not reported | onset |
| Al Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 1.4 | Pressure not reported | zero_resistance |
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