NMR study of electronic state in CePt3Si
K. Ueda, K. Hamamoto, T. Kohara, G. Motoyama, Y. Oda
arXiv:cond-mat/0409638 · DOI 10.1016/j.physb.2005.01.065 · 2004-09-24 · Physica B-condensed Matter
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Abstract
In this article, we report the temperature dependence of spin-lattice relaxation rates at two Pt sites and one Si site in CePt3Si with a non-centrosymmetric structure center. 1/T1 for both Pt sites between 2 K and 300 K and 1/T1 of Si above 3 K might be explained by the contributions from the low-lying crystal-electric-field level and the quasiparticle due to the hybridization between the ground state and conduction electrons. Just below Tc no remarkable enhancement in 1/T1 was observed. The estimated value of superconducting gap is about 2Delta = 3kBTc.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| CePt3Si Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 0.75 | Pressure not reported | unknown |
| CePt3Si Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 0.6 | Pressure not reported | unknown |
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