Focused-ion-beam-induced deposition of superconducting nanowires
E. S. Sadki, S. Ooi, K. Hirata
arXiv:cond-mat/0410477 · DOI 10.1063/1.1842367 · 2004-10-19 · Applied Physics Letters
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Abstract
Superconducting nanowires, with a critical temperature of 5.2 K, have been synthesized using an ion-beam-induced deposition, with a Gallium focused ion beam and Tungsten Carboxyl, W(CO)6, as precursor. The films are amorphous, with atomic concentrations of about 40, 40, and 20 % for W, C, and Ga, respectively. Zero Kelvin values of the upper critical field and coherence length of 9.5 T and 5.9 nm, respectively, are deduced from the resistivity data at different applied magnetic fields. The critical current density is Jc= 1.5 10^5 A/cm2 at 3 K. This technique can be used as a template-free fabrication method for superconducting devices.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| W2C2Ga Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 5.2 | Pressure not reported | unknown |
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