Probability of the resistive state formation caused by absorption of a single-photon in current-carrying superconducting nano-strips

Alexei Semenov; Andreas Engel; Heinz-Wilhelm Hübers; Konstantin Ilin; Michael Siegel

doi:10.1140/epjb/e2005-00351-8

Probability of the resistive state formation caused by absorption of a single-photon in current-carrying superconducting nano-strips

Alexei Semenov, Andreas Engel, Heinz-Wilhelm Hübers, Konstantin Ilin, Michael Siegel

arXiv:cond-mat/0410633 · DOI 10.1140/epjb/e2005-00351-8 · 2004-10-25 · The European Physical Journal B - Condensed Matter and Complex Systems

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Abstract

We have studied supercurrent-assisted formation of the resistive state in nano-structured Nb and NbN superconducting films after absorption of a single photon. In amorphous narrow NbN strips the probability of the resistive state formation has a pronounced spectral cut-off. The corresponding threshold photon energy decreases with the bias current. Analysis of the experimental data in the framework of the generalized hot-spot model suggests that the quantum yield for near-infrared photons increases faster than the photon nergy. Relaxation of the resistive state depends on the photon energy making the phenomenon feasible for the development of energy resolving single-photon detectors.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
NbN Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	—	Pressure not reported	unknown
Nb Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	—	Pressure not reported	unknown