Transition from Mott insulator to superconductor in GaNb$_{4}$Se$_{8}$ and GaTa$_{4}$Se$_{8}$ under high pressure
M. M. Abd-Elmeguid, B. Ni, D. I. Khomskii, R. Pocha, D. Johrendt, X. Wang, K. Syassen
arXiv:cond-mat/0504284 · DOI 10.1103/PhysRevLett.93.126403 · 2005-04-12 · Physical review letters
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Abstract
Electronic conduction in GaM$_{4}$Se$_{8}$ (M=Nb;Ta) compounds with the fcc GaMo$_{4}$S$_{8}$-type structure originates from hopping of localized unpaired electrons (S=1/2) among widely separated tetrahedral M$_{4}$ metal clusters. We show that under pressure these systems transform from Mott insulators to a metallic and superconducting state with T$_{C}$=2.9 and 5.8K at 13 and 11.5GPa for GaNb$_{4}$Se$_{8}$ and GaTa$_{4}$Se$_{8}$, respectively. The occurrence of superconductivity is shown to be connected with a pressure-induced decrease of the MSe$_{6}$ octahedral distortion and simultaneous softening of the phonon associated with MSe-bonds.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| GaNb4Se8 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 2.9 | 13 GPa | unknown |
| GaTa4Se8 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 5.8 | 11.5 GPa | unknown |
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