Selective epitaxial growth of sub-micron complex oxide structures by amorphous SrTiO3

P. Morales; M. DiCiano; J. Y. T. Wei

doi:10.1063/1.1925781

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Selective epitaxial growth of sub-micron complex oxide structures by amorphous SrTiO3

P. Morales, M. DiCiano, J. Y. T. Wei

arXiv:cond-mat/0506001 · DOI 10.1063/1.1925781 · 2005-06-01 · Applied Physics Letters

T1experimental11 citations

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Abstract

A chemical-free technique for fabricating submicron complex oxide structures has been developed based on selective epitaxial growth. The crystallinity and hence the conductivity of the complex oxide is inhibited by amorphous SrTiO3 (STO). Using a combination of pulsed laser deposition and electron-beam lithography, amorphous STO barriers are first deposited on a single crystal substrate. A thin film is then deposited on the patterned substrate with the amorphous STO barriers acting to electrically and physically isolate different regions of the film. Since no chemical or physical etchants come in contact with the deposited film, its integrity and stability are preserved. This technique has successfully produced sub-micron YBCO and LCMO structures.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
YBa2Cu3O7-δ Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	86	Pressure not reported	unknown