Influence of doping level on the Hall coefficient and on the thermoelectric power in $Nd_{2-x}Ce_xCuO_4$
C. H. Wang, G. Y. Wang, T. Wu, Z. Feng, X. G. Luo, X. H. Chen
arXiv:cond-mat/0506681 · DOI 10.1103/PhysRevB.72.132506 · 2005-06-25 · Physical Review B
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Abstract
Hall coefficient $R_H$ and thermoelectric power TEP are studied systematically in the single crystals $Nd_{2-x}Ce_xCuO_{4+δ}$ (NCCO) with different x from underdoped to overdoped regime. With increasing doping level, both $R_H$ and TEP decrease and change their sign from negative to positive. A striking feature is that the temperature dependence of the Hall angle follows a $T^4$ behavior in the underdoped regime, while a $T^2$ in the overdoped regime. These behaviors are closely related to the evolution of Fermi surface with doping level observed by ARPES.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Nd1.83Ce0.17CuO4 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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