Charge carrier correlation in the electron-doped t-J model

Leung, P. W.

Charge carrier correlation in the electron-doped t-J model

Leung, P. W.

arXiv:cond-mat/0508035 · 2006-12-13

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Abstract

We study the t-t'-t''-J model with parameters chosen to model an electron-doped high temperature superconductor. The model with one, two and four charge carriers is solved on a 32-site lattice using exact diagonalization. Our results demonstrate that at doping levels up to x=0.125 the model possesses robust antiferromagnetic correlation. When doped with one charge carrier, the ground state has momenta (\pmπ,0) and (0,\pmπ). On further doping, charge carriers are unbound and the momentum distribution function can be constructed from that of the single-carrier ground state. The Fermi surface resembles that of small pockets at single charge carrier ground state momenta, which is the expected result in a lightly doped antiferromagnet. This feature persists upon doping up to the largest doping level we achieved. We therefore do not observe the Fermi surface changing shape at doping levels up to 0.125.