Electric field effect modulation of transition temperature, mobile carrier density and in-plane penetration depth in NdBa2Cu3O(7-delta) thin films
D. Matthey, N. Reyren, T. Schneider, J. -M. Triscone
arXiv:cond-mat/0603079 · 2006-03-03
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Abstract
We explore the relationship between the critical temperature, T_c, the mobile areal carrier density, n_2D, and the zero temperature magnetic in-plane penetration depth, lambda_ab(0), in very thin underdoped NdBa2Cu3O{7-delta} films near the superconductor to insulator transition using the electric field effect technique. We observe that T_c depends linearly on both, n_2D and lambda_ab(0), the signature of a quantum superconductor to insulator (QSI) transition in two dimensions with znu-bar where z is the dynamic and nu-bar the critical exponent of the in-plane correlation length.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| NdBa2Cu3O7-δ Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 5.67 | Pressure not reported | unknown |
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