Subgap conductivity in SIN-junctions of high barrier transparency

S. V. Lotkhov; D. V. Balashov; M. I. Khabipov; F. -I. Buchholz; A. B. Zorin

doi:10.1016/j.physc.2006.06.053

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Subgap conductivity in SIN-junctions of high barrier transparency

S. V. Lotkhov, D. V. Balashov, M. I. Khabipov, F. -I. Buchholz, A. B. Zorin

arXiv:cond-mat/0605237 · DOI 10.1016/j.physc.2006.06.053 · 2006-05-09

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Abstract

We investigate the current-voltage characteristics of high-transparency superconductor-insulator-normal metal (SIN) junctions with the specific tunnel resistance below 30 kOhm per square micron. The junctions were fabricated from different superconducting and normal conducting materials, including Nb, Al, AuPd and Cu. The subgap leakage currents were found to be appreciably larger than those given by the standard tunnelling model. We explain our results using the model of two-electron tunnelling in the coherent diffusive transport regime. We demonstrate that even in the high-transparency SIN-junctions, a noticeable reduction of the subgap current can be achieved by splitting a junction into several submicron sub-junctions. These structures can be used as nonlinear low-noise shunts in Rapid-Single-Flux-Quantum (RSFQ) circuitry for controlling Josephson qubits.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
Nb Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	—	Pressure not reported	unknown
Al Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	—	Pressure not reported	unknown