Self-shunted Al/AlOx/Al Josephson junctions
S. V. Lotkhov, E. M. Tolkacheva, D. V. Balashov, M. I. Khabipov, F. -I. Buchholz, A. B. Zorin
arXiv:cond-mat/0605532 · 2006-05-22
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Abstract
Self-shunted aluminum Josephson junctions with high-transparency barriers were fabricated using the shadow-evaporation technique and measured at low temperatures, T=25 mK. Due to high junction transparency, the IV-characteristics were found to be of only small hysteresis with retrapping-to-switching current ratio of up to 80%. The observed critical currents were close to the Ambegaokar-Baratoff values (up to 80-100%). Good barrier quality was confirmed by the low subgap leakage currents in the quasiparticle branches, which makes the self-shunted Al junctions promising for application in integrated RSFQ-qubit circuitry.
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