Negative Hall coefficients of heavily overdoped La2-xSrxCuO4
I. Tsukada, S. Ono
arXiv:cond-mat/0605720 · DOI 10.1103/PhysRevB.74.134508 · 2006-05-30 · Physical Review B
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Abstract
The Hall coefficient (R_H) is investigated along the in-plane direction for carefully prepared La_2-x_Sr_x_CuO_4_ thin films from x=0.08 to x=0.40. It is found that R_H becomes almost temperature independent around room temperature for x >= 0.24, and its sign smoothly changes from positive to negative between x = 0.28 and 0.32, showing contrasting behavior to previously reported results. This result indicates that the carrier can be doped smoothly across the hole- to electron-dominant regions. According to the sign change of R_H, superconductivity disappears for x >= 0.32 films, which suggests that a positive R_H is one of the necessary conditions for superconductivity in p-type cuprates.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| La2-xSrxCuO4 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | zero_resistance |
| La2-xSrxCuO4 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | zero_resistance |
| La2-xSrxCuO4 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | onset |
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