Doping n-type carriers by La-substitution for Ba in YBa_2Cu_3O_y system
Kouji Segawa, Yoichi Ando
arXiv:cond-mat/0608349 · DOI 10.1103/PhysRevB.74.100508 · 2006-08-16 · Physical Review B
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Abstract
Thus far, there is no cuprate system where both n-type and p-type charge carriers can be doped without changing the crystallographic structure. For studying the electron-hole symmetry in an identical structure, we try to dope n-type carriers to YBa2Cu3Oy system by reducing oxygen content and substituting La3+ ions for Ba2+. Single crystals of La-doped YBa2Cu3Oy are grown by a flux method with Y2O3 crucibles and it is confirmed that La actually substitutes \~13% of Ba. The oxygen content y can be varied between 6.21 and 6.95 by annealing the crystals in an atmosphere with controlled oxygen partial pressure. The in-plane resistivity rho_ab at room temperature was found to increase with decreasing oxygen content y down to 6.32, but interestingly further decrease in y results in a decrease in rho_ab. The most reduced samples with y = 6.21 show rho_ab of ~30 mOhm cm at room temperature, which is as much as seven orders-of-magnitude smaller than the maximum value at y = 6.32. Furthermore, both the Hall coefficient and the Seebeck coefficient of the y = 6.21 samples are found to be negative at room temperatures. The present results demonstrate that the non-doped Mott-insulating state has been crossed upon reducing y and n-type carriers are successfully doped in this material.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Y0.38Ba1.74La0.88Cu3O6.95 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 25 | Pressure not reported | zero_resistance |
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