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Evolution of the Electronic Structure of 1T-CuxTiSe2

J. F. Zhao, H. W. Ou, G. Wu, B. P. Xie, Y. Zhang, D. W. Shen, J. Wei, L. X. Yang, J. K. Dong, M. Arita, H. Namatame, M. Taniguchi, X. H. Chen, D. L. Feng

arXiv:cond-mat/0612091 · DOI 10.1103/PhysRevLett.99.146401 · 2006-12-04 · Physical review letters

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Abstract

The electronic structure of a new charge-density-wave/ superconductor system, 1T-CuxTiSe2, has been studied by photoemission spectroscopy. A correlated semiconductor band structure is revealed for the undoped case. With Cu doping, the charge density wave is suppressed by the raising of the chemical potential, while the superconductivity is enhanced by the enhancement of the density of states. Moreover, the strong scattering at high doping might be responsible for the suppression of superconductivity in that regime.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
Cu0.08TiSe2

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4.3Pressure not reportedunknown
Cu0.10TiSe2

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2.8Pressure not reportedunknown
Cu0.055TiSe2

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2.5Pressure not reportedunknown
Cu0.065TiSe2

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3.4Pressure not reportedunknown

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