Lithography-Free Fabrication of Graphene Devices
N. Staley, H. Wang, C. Puls, J. Forster, T. N. Jackson, K. McCarthy, B. Clouser, Y. Liu
arXiv:cond-mat/0612128 · DOI 10.1063/1.2719607 · 2006-12-05 · Applied Physics Letters
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Abstract
We have developed a lithography-free, all-dry process for fabricating graphene devices using an ultrathin quartz filament as a shadow mask to avoid possible contamination of graphene during lithographic process. This technique was used to prepare devices for electrical transport as well as planar tunnel junction studies of n-layer graphene (nLG), with n = 1, 2, 3 and higher. We observed localization behavior and an apparent reduction of density of states (DOS) near the Fermi energy in nLG.
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