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Determination of density of states of thin high-$T_c$ films by FET type microstructures

Todor Mishonov, Martin Stoev

arXiv:cond-mat/0612169 · 2006-12-06

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Abstract

A simple electronic experiment with a field effect transistor type microstructure is suggested. The thin superconductor layer is the source-drain channel of the layered structure where an AC current is applied. It is necessary to measure the second harmonic of the source-gate voltage and third harmonic of the source-drain voltage. The electronic measurement can give the logarithmic derivative of the density of states which is an important parameter for fitting of parameters of the band structures.

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