Microscopic annealing process and its impact on superconductivity in T'-structure electron-doped copper oxides
Hye Jung Kang, Pengcheng Dai, Branton J. Campbell, Peter J. Chupas, Stephan Rosenkranz, Peter L. Lee, Qingzhen Huang, Shiliang Li, Seiki Komiya, Yoichi Ando
arXiv:cond-mat/0701345 · DOI 10.1038/nmat1847 · 2007-01-15 · Nature materials
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Abstract
High-transition-temperature superconductivity arises in copper oxides when holes or electrons are doped into the CuO2 planes of their insulating parent compounds. While hole-doping quickly induces metallic behavior and superconductivity in many cuprates, electron-doping alone is insufficient in materials such as R2CuO4 (R is Nd, Pr, La, Ce, etc.), where it is necessary to anneal an as-grown sample in a low-oxygen environment to remove a tiny amount of oxygen in order to induce superconductivity. Here we show that the microscopic process of oxygen reduction repairs Cu deficiencies in the as-grown materials and creates oxygen vacancies in the stoichiometric CuO2 planes, effectively reducing disorder and providing itinerant carriers for superconductivity. The resolution of this long-standing materials issue suggests that the fundamental mechanism for superconductivity is the same for electron- and hole-doped copper oxides.
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