Influence of structural disorder on low-temperature behavior of penetration depth in electron-doped high-T_C thin films

A. J. C. Lanfredi; S. Sergeenkov; F. M. Araujo-Moreira

doi:10.1016/j.physc.2006.08.008

Influence of structural disorder on low-temperature behavior of penetration depth in electron-doped high-T_C thin films

A. J. C. Lanfredi, S. Sergeenkov, F. M. Araujo-Moreira

arXiv:cond-mat/0701457 · DOI 10.1016/j.physc.2006.08.008 · 2007-01-18 · Physica C-superconductivity and Its Applications

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Abstract

To probe the influence of structural disorder on low-temperature behavior of magnetic penetration depth in electron-doped high-T_C superconductors, a comparative study of high-quality Pr_{1.85}Ce_{0.15}CuO_4 (PCCO) and Sm_{1.85}Ce_{0.15}CuO_4 (SCCO) thin films is presented. The obtained results confirm a d-wave pairing mechanism in both samples, substantially modified by impurity scattering (which is more noticeable in less homogeneous SCCO films) at the lowest temperatures. The value of the extracted impurity scattering rate correlates with the quality of our samples and is found to be much higher in less homogeneous films with lower T_C.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
Pr1.85Ce0.15CuO4 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	—	Pressure not reported	unknown
Sm1.85Ce0.15CuO4 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	—	Pressure not reported	unknown