Gate-Voltage Studies of Discrete Electronic States in Al Nanoparticles
D. C. Ralph, C. T. Black, M. Tinkham
arXiv:cond-mat/9701081 · DOI 10.1103/PhysRevLett.78.4087 · 1997-01-12 · Physical Review Letters
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Abstract
We have investigated the spectrum of discrete electronic states in single, nm-scale Al particles incorporated into new tunneling transistors, complete with a gate electrode. The addition of the gate has allowed (a) measurements of the electronic spectra for different numbers of electrons in the same particle, (b) greatly improved resolution and qualitatively new results for spectra within superconducting particles, and (c) detailed studies of the gate-voltage dependence of the resonance level widths, which have directly demonstrated the effects of non-equilibrium excitations.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Al Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | — |
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