Small-q electron-phonon scattering and linear dc resistivity in high-T_c oxides
G. Varelogiannis, E. N. Economou
arXiv:cond-mat/9705085 · DOI 10.1209/epl/i1998-00248-2 · 1997-05-09 · EPL
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Abstract
We examine the effect on the DC resistivity of small-q electron-phonon scattering, in a system with the electronic topology of the high-T_c oxides. Despite the fact that the scattering is dominantly forward, its contribution to the transport can be significant due to ``ondulations'' of the bands in the flat region and to the umpklapp process. When the extended van-Hove singularities are sufficiently close to $E_F$ the acoustic branch of the phonons contribute significantly to the transport. In that case one can obtain linear $T$ dependent resistivity down to temperatures as low as 10 K, even if electrons are scattered also by optical phonons of about 500 K as reported by Raman measurements.
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