Multilayer technique developed for fabricating Nb-based single-electron devices
Alexey B. Pavolotsky, Thomas Weimann, Hansjoerg Scherer, Vladimir A. Krupenin, Juergen Niemeyer, Alexander B. Zorin
arXiv:cond-mat/9804192 · DOI 10.1116/1.590504 · 1998-04-17 · Journal of Vacuum Science & Technology B
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Abstract
A reliable process has been developed for the fabrication of all-Nb single-electron circuits, based on spin-on glass planarization. The process steps are the in situ growth of Nb/AlOx/Nb sandwich, definition of the patterns of junctions, base electrodes and wiring by use of reactive ion etching and the planarization of a spin-on glass insulation between base electrode and wiring. A single electron transistor made of 0.1 square micrometer area junctions clearly shows the e-periodic Coulomb blockade modulation by a voltage applied to a gate.
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