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Doping Dependent Density of States and Pseudogap Behavior in La2-xSrxCuO4

A. Ino, T. Mizokawa, K. Kobayashi, A. Fujimori, T. Sasagawa, T. Kimura, K. Kishio, K. Tamasaku, H. Eisaki, S. Uchida

arXiv:cond-mat/9806341 · DOI 10.1103/PhysRevLett.81.2124 · 1998-06-29 · Physical Review Letters

T2experimental97 citations

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Abstract

We have made a high-resolution photoemission study of La2-xSrxCuO4 in a wide hole concentration (x) range from a heavily overdoped metal to an undoped insulator. As x decreases, the spectral density of states at the chemical potential (μ) is suppressed with an x-dependence similar to the suppression of the electronic specific heat coefficient. In the underdoped region, the spectra show a pseudogap structure on the energy scale of 0.1 eV. The width of the pseudogap increases with decreasing x following the x-dependence of the characteristic temperatures of the magnetic susceptibility and the Hall coefficient.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
La2-xSrxCuO4

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18Pressure not reportedunknown
La2-xSrxCuO4

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

34Pressure not reportedunknown
La2-xSrxCuO4

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

32Pressure not reportedunknown
La2-xSrxCuO4

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

21Pressure not reportedunknown
La2-xSrxCuO4

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

0Pressure not reportedunknown

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