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C-axis electronic Raman scattering in Bi_2Sr_2CaCu_2O_{8+δ}

H. L. Liu, G. Blumberg, M. V. Klein, P. Guptasarma, D. G. Hinks

arXiv:cond-mat/9808322 · DOI 10.1103/PhysRevLett.82.3524 · 1998-08-28 · Physical Review Letters

T1theoretical15 citations

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Abstract

We report a c-axis-polarized electronic Raman scattering study of Bi_2Sr_2CaCu_2O_{8+δ} single crystals. In the normal state, a resonant electronic continuum extends to 1.5 eV and gains significant intensity as the incoming photon energy increases. In the superconducting state, a coherence 2Δpeak appears around 50 meV, with a suppression of the scattering intensity at frequencies below the peak position. The peak energy, which is higher than that seen with in-plane polarizations, signifies distinctly different dynamics of quasiparticle excitations created with out-of-plane polarization.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
Bi2Sr2CaCu2O8+δ

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87Pressure not reportedonset
Bi2Sr2CaCu2O8+δ

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

85Pressure not reportedmidpoint
Bi2Sr2CaCu2O8+δ

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

93Pressure not reportedunknown

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