Andreev reflection in Si-engineered Al/InGaAs hybrid junctions
Silvano De Franceschi, Francesco Giazotto, Fabio Beltram, Lucia Sorba, Marco Lazzarino, Alfonso Franciosi
arXiv:cond-mat/9811338 · DOI 10.1063/1.122926 · 1998-11-24 · Applied Physics Letters
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Abstract
Andreev-reflection dominated transport is demonstrated in Al/n-In0.38Ga0.62As superconductor-semiconductor junctions grown by molecular beam epitaxy on GaAs(001). High junction transparency was achieved in low-doped devices by exploiting Si interface bilayers to suppress the native Schottky barrier. It is argued that this technique is ideally suited for the fabrication of ballistic transport hybrid microstructures.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Al Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 1.1 | Pressure not reported | unknown |
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