The microwave power handling of a FIB generated weak link in a YBCO film
A. Cowie, L. F. Cohen, M. W. Denhoff
arXiv:cond-mat/9902095 · DOI 10.1088/0953-2048/12/7/305 · 1999-02-08 · Superconductor Science and Technology
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Abstract
We have measured the power dependent microwave properties of a weak link in a YBa2Cu3O7 thin film formed by writing a line of damage using a focused ion beam. The measurement was made using a parallel plate resonator at 5.5 GHz with the weak link written across the width of one of the plates. The ion induced damage was characterized using a TRIM computer simulation and the dc properties of similar weak links was measured. Using a 200 eV Si ion dose of 2e13 cm-2, the Tc of the damaged region was reduced by 5.5 K and the normal resistivity was doubled. Surprisingly, the microwave measurements did not show any Josephson junction characteristics. Rather, the ion damaged region exhibited a greatly increased microwave resistivity that was constant as a function of microwave power up to rf fields of 20 mT at 21 K.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| YBa2Cu3O7-δ Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 85 | Pressure not reported | unknown |
| YBa2Cu3O7-δ Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 79.5 | Pressure not reported | unknown |
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