Observation of Coherent Charge-State Mixing in Asymmetric Bloch Transistors

Daniel J. Flees; J. E. Lukens; Siyuan Han

doi:10.1023/A:1007797329201

← Back to search

Observation of Coherent Charge-State Mixing in Asymmetric Bloch Transistors

Daniel J. Flees, J. E. Lukens, Siyuan Han

arXiv:cond-mat/9905065 · DOI 10.1023/A:1007797329201 · 1999-05-06 · Journal of Superconductivity

T37 citations

Active bibliographic source — not scientific approval

Bibliographic access preserves source history; it does not approve extracted materials or validate reported claims. Review warnings on each occurrence separately.

Abstract

The reduced switching current of an excited energy-band in a Bloch transistor can be used to detect microwave-induced interband transitions. Spectroscopic measurements of the band-gap are performed by mapping the frequency dependence of the excitation threshold where the microwave photon energy and band-gap are equal. This excitation threshold also provides a probe of charge-state mixing on the island of the transistor. Any asymmetry in the junctions of the transistor makes the coherent mixing of charge-states appear as a finite gap-splitting at the electrostatic degeneracy point between states differing by one excess Cooper-pair on the island. The measured gap-splitting in an asymmetric transistor clearly demonstrates the effect.