Magnetoresistance and conductivity exponents of quench-condensed ultra-thin films of Bi
K. Das Gupta, G. Sambandamurthy, V. H. S. Moorthy, N. Chandrasekhar
arXiv:cond-mat/9910018 · DOI 10.1016/S0921-4526(99)02937-3 · 1999-10-02 · Physica B-condensed Matter
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Abstract
We have studied the magnetoresistance (MR) and evolution of conductivity with thickness of quench-condensed Bismuth films on substrates of various dielectric constants. Our results indicate a negative intial MR proportional to the square of the magnetic field. The conductance shows a power-law kind of dependence on thickness, with an exponent close to 1.33, characterisitic of a 2-D percolating system, only when the films are grown on a thin ($\sim 10${\rm Å} Germanium underlayer but not otherwise.
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