Tc max
40.0 K
Tc ambient
—
arXiv year
2012
Papers
2
Tc exp.
40.0 K
Tc theo.
—
Evidence
experimental
Tc max measured at ambient, thin_film, susceptibility, DOI: 10.1103/PhysRevB.86.134524
Evidence (2 records from 2 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 40.0 | ambient | thin_film | susceptibility | — | 2012 | T1 | DOI: 10.1103/PhysRevB.86.134524 |
| 25.0 | — | thin_film | resistivity | — | 2017 | T1 | DOI: 10.1103/PhysRevB.96.115117 |
Structure
- Phase
- infinite_layer
Superconducting parameters
- Pairing symmetry
- d-wave
- λ_eph (e–ph coupling)
- —
Samples & pressure
- Sample form
- thin_film
- Substrate
- LaAlO3
- Doping type
- hole
- Doping level
- 0.140