Tc max
259.0 K
Tc ambient
259.0 K
arXiv year
2019
Papers
1
Tc max measured at ambient, thin_film, resistivity, arXiv:1906.00708
Evidence (1 record from 1 paper)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 259.0 | ambient | thin_film | resistivity | — | 2019 | — | 1906.00708 |
Superconducting parameters
- λ_eph (e–ph coupling)
- —
Samples & pressure
- Sample form
- thin_film
- Substrate
- SiO2/Si