Tc max
1.3 K
Tc ambient
1.3 K
arXiv year
1986
Papers
916
Tc exp.
1.9 K
Tc theo.
1.6 K
Evidence
experimental
Tc max measured at thin_film, resistivity, DOI: 10.1103/PhysRevB.50.9363, confirmed by 14 papers
Evidence (1067 records from 916 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 1.9 | — | thin_film | resistivity | — | 2008 | T1 | DOI: 10.1103/PhysRevB.77.134510 |
| 1.9 | — | thin_film | — | — | 2000 | T1 | DOI: 10.1103/PhysRevB.62.R14645 |
| 1.9 |
Structure
- Crystal structure
- Fm-3m
- Lattice a (Å)
- 4.030
Superconducting parameters
- Pairing symmetry
- s-wave
- Gap structure
- full_gap
- Hc2
- 1000.0 T (in-plane)
- λ_eph (e–ph coupling)
- 0.45
- ω_log
- 314 K
Samples & pressure
- Sample form
- thin_film
- Substrate
- Si
- Pressure type
- none
- Doping type
- none
- Doping level
- 0.000