Tc max
25.2 K
Tc ambient
25.2 K
arXiv year
2008
Papers
43
Tc exp.
25.2 K
Tc theo.
—
Evidence
experimental
Tc max measured at single_crystal, susceptibility, arXiv:1103.1300, confirmed by 3 papers
Evidence (48 records from 43 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 25.6 | — | thin_film | resistivity | — | 2014 | T1 | 1403.0815 |
| 25.2 | — | single_crystal | susceptibility | — | 2011 | T1 | 1103.1300 |
| 25.2 | — | single_crystal | resistivity | — | 2009 | T1 | 0903.2418 |
| 25.0 | — | single_crystal | resistivity | s-wave | 2013 | T2 | 1307.1908 |
| 25.0 | — | single_crystal | resistivity | s_pm | 2010 | T1 | DOI: 10.1103/PhysRevB.82.184527 |
| 25.0 | — | single_crystal | resistivity | — | 2010 | T1 | DOI: 10.1103/PhysRevB.82.054518 |
| 25.0 | — | single_crystal | resistivity | — | 2010 | — | 1004.1658 |
| 25.0 | — | single_crystal | specific_heat | s_pm | 2010 | — | 1009.0954 |
| 25.0 | — | single_crystal | susceptibility, resistivity | — | 2010 | T1 | DOI: 10.1103/PhysRevB.81.100512 |
| 25.0 | — | single_crystal | resistivity, susceptibility | — | 2009 | T1 | 0912.0849 |
| 24.5 | — | single_crystal | resistivity | s-wave | 2013 | T2 | 1307.1908 |
| 24.5 | ambient | single_crystal | resistivity | s_pm | 2009 | T1 | 0906.4513 |
| 24.2 | — | thin_film | resistivity | — | 2014 | T1 | 1403.0815 |
| 24.0 | — | single_crystal | specific_heat | — | 2014 | T1 | DOI: 10.1103/PhysRevB.89.140503 |
| 24.0 | — | single_crystal | — | — | 2011 | T1 | 1108.2749 |
| 23.7 | — | powder | susceptibility | — | 2012 | T1 | 1205.5219 |
| 23.7 | — | thin_film | resistivity | — | 2010 | T1 | 1004.4852 |
| 23.7 | — | thin_film | resistivity | — | 2010 | T1 | DOI: 10.1103/PhysRevLett.105.167003 |
| 23.7 | — | thin_film | resistivity | — | 2010 | T1 | 1005.1626 |
| 23.0 | — | thin_film | susceptibility | — | 2020 | T1 | 2011.13036 |
| 23.0 | — | thin_film | resistivity | — | 2011 | T1 | 1111.3918 |
| 23.0 | ambient | single_crystal | specific_heat | s_pm | 2009 | T1 | 0906.4513 |
| 22.8 | — | thin_film | resistivity | — | 2012 | T1 | DOI: 10.1103/PhysRevB.86.214504 |
| 22.5 | — | single_crystal | resistivity | — | 2010 | T1 | DOI: 10.1103/PhysRevB.82.100506 |
| 22.0 | — | single_crystal | susceptibility, resistivity | — | 2020 | T1 | DOI: 10.1103/PhysRevB.101.174516 |
| 22.0 | — | single_crystal | resistivity | — | 2014 | T1 | DOI: 10.1103/PhysRevB.90.014503 |
| 22.0 | — | — | — | — | 2009 | T1 | 0904.1571 |
| 22.0 | ambient | single_crystal | resistivity | — | 2009 | T1 | 0910.1071 |
| 20.0 | ambient | single_crystal | resistivity, specific_heat | — | 2010 | — | 1001.4564 |
| 20.0 | — | single_crystal | specific_heat | s_pm | 2010 | — | 1009.0954 |
| 18.1 | — | thin_film | resistivity | — | 2015 | — | 1507.03318 |
| 18.0 | — | thin_film | resistivity | — | 2011 | T1 | 1111.3918 |
| — | — | thin_film | — | — | 2025 | T1 | 2507.22383 |
| — | — | single_crystal | STM | — | 2019 | — | 1908.10436 |
| — | — | thin_film | resistivity | — | 2019 | T1 | 1901.01478 |
| — | — | thin_film | resistivity, susceptibility | — | 2016 | T1 | 1609.00304 |
| — | — | single_crystal | specific_heat | — | 2014 | T1 | 1402.6762 |
| — | — | single_crystal | — | s-wave | 2013 | T1 | 1301.3782 |
| — | — | single_crystal | resistivity | — | 2013 | T1 | DOI: 10.1103/PhysRevB.88.100501 |
| — | — | single_crystal | resistivity | — | 2013 | T1 | DOI: 10.1103/PhysRevLett.110.097003 |
| — | — | — | optical_conductivity | s-wave | 2010 | T1 | 1003.5038 |
| — | — | single_crystal | specific_heat | — | 2010 | T1 | DOI: 10.1103/PhysRevB.81.184518 |
| — | — | single_crystal | specific_heat | s_pm | 2010 | T1 | 1009.1091 |
| — | — | single_crystal | specific_heat | — | 2010 | T1 | 1004.4576 |
| — | — | single_crystal | — | — | 2010 | T1 | 1006.3490 |
| — | — | — | — | s_pm | 2010 | — | 1007.3761 |
| — | — | single_crystal | resistivity | — | 2009 | T1 | 0907.3875 |
| — | — | single_crystal | specific_heat | — | 2008 | T1 | 0812.4176 |
Structure
- Crystal structure
- ThCr2Si2-type
Superconducting parameters
- Pairing symmetry
- s_pm
- Gap structure
- multi_gap
- Hc2
- 38.0 T (0 K)
- λ_eph (e–ph coupling)
- 0.12
Competing orders
- Competing order
- AFM
- ρ(T) exponent
- 1.26
Samples & pressure
- Sample form
- single_crystal
- Substrate
- MgO + Fe buffer layer
- Doping type
- electron
- Doping level
- 0.080