Tc max
—
Tc ambient
—
arXiv year
2012
Papers
1
Evidence (1 record from 1 paper)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| — | — | single_crystal | resistivity | — | 2012 | — | 1204.2563 |
Structure
- Crystal structure
- ThCr2Si2-type
- Space group
- I4/mmm
Superconducting parameters
- λ_eph (e–ph coupling)
- —
Samples & pressure
- Sample form
- single_crystal
- Doping type
- electron
- Doping level
- 0.070