Tc max
25.3 K
Tc ambient
25.3 K
arXiv year
2008
Papers
24
Tc exp.
25.3 K
Tc theo.
—
Evidence
experimental
Tc max measured at single_crystal, resistivity, arXiv:0810.1048, confirmed by 3 papers
Evidence (33 records from 24 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 25.3 | — | single_crystal | resistivity, STM | — | 2009 | T1 | DOI: 10.1103/PhysRevLett.102.097002 |
| 25.3 | — | single_crystal | resistivity | unknown | 2008 | — | 0810.1048 |
| 25.3 | — | single_crystal | specific_heat | — | 2008 | T2 | 0811.2920 |
| 25.0 | — | single_crystal | resistivity | — | 2008 | T2 | 0811.2920 |
| 24.5 | — | single_crystal | resistivity | s_pm | 2010 | T1 | DOI: 10.1103/PhysRevLett.105.237002 |
| 24.5 | — | single_crystal | resistivity | s_pm | 2010 | — | 1009.1572 |
| 23.8 | — | single_crystal | resistivity | — | 2009 | T1 | 0907.3072 |
| 23.4 | — | single_crystal | susceptibility, resistivity | — | 2009 | T1 | 0907.3072 |
| 23.4 | — | single_crystal | susceptibility | — | 2009 | T1 | 0911.5582 |
| 23.1 | — | thin_film | resistivity | — | 2010 | — | 1011.0035 |
| 23.1 | — | single_crystal | susceptibility | — | 2009 | T1 | 0907.3072 |
| 23.1 | — | single_crystal | susceptibility | — | 2009 | T1 | 0911.5582 |
| 22.1 | — | single_crystal | resistivity | — | 2009 | T1 | DOI: 10.1103/PhysRevB.80.214518 |
| 22.0 | — | — | — | — | 2011 | T1 | 1105.3939 |
| 22.0 | — | single_crystal | resistivity, susceptibility, specific_heat | — | 2008 | T1 | 0807.2237 |
| 22.0 | — | single_crystal | susceptibility | — | 2008 | T1 | 0810.0305 |
| 22.0 | — | single_crystal | resistivity, susceptibility | — | 2008 | T1 | DOI: 10.1103/PhysRevLett.101.117004 |
| 20.2 | — | thin_film | resistivity | — | 2010 | — | 1011.0035 |
| 20.0 | — | — | resistivity | — | 2013 | T1 | 1302.6480 |
| 20.0 | — | single_crystal | specific_heat | — | 2008 | T1 | DOI: 10.1103/PhysRevLett.101.117004 |
| 19.9 | — | thin_film | resistivity | — | 2009 | T2 | 0912.4351 |
| 18.8 | — | single_crystal | resistivity | — | 2008 | T1 | 0808.1420 |
| 18.7 | — | thin_film | resistivity | — | 2009 | T2 | 0912.4351 |
| 16.0 | — | single_crystal | resistivity | — | 2008 | T1 | 0808.1420 |
| 15.0 | — | thin_film | resistivity | — | 2010 | T1 | 1007.5252 |
| 14.0 | — | thin_film | resistivity | — | 2010 | T1 | 1007.5454 |
| 11.1 | — | thin_film | resistivity | — | 2011 | T1 | 1108.0851 |
| — | — | thin_film | resistivity | — | 2012 | T1 | 1202.1445 |
| — | — | single_crystal | STM | — | 2011 | T3 | 1109.1509 |
| — | — | single_crystal | STM | — | 2010 | T1 | DOI: 10.1103/PhysRevB.81.104520 |
| — | — | single_crystal | resistivity, susceptibility | s_pm | 2010 | — | 1001.5386 |
| — | — | single_crystal | STM | unknown | 2008 | — | 0810.1048 |
| — | — | — | resistivity | s-wave | 2008 | — | 0812.3295 |
Structure
- Crystal structure
- ThCr2Si2 structure
- Space group
- I4/mmm (No. 139)
- Lattice a (Å)
- 3.960
Superconducting parameters
- Pairing symmetry
- s_pm
- Hc2
- 43.0 T (B parallel c)
- λ_eph (e–ph coupling)
- —
Samples & pressure
- Sample form
- single_crystal
- Substrate
- STO buffered PMN-PT
- Doping type
- electron
- Doping level
- 0.200