Tc max
40.0 K
Tc ambient
40.0 K
arXiv year
2008
Papers
16
Tc exp.
38.0 K
Tc theo.
—
Evidence
experimental
Tc max measured at thin_film, arXiv:1004.4751, confirmed by 3 papers
Evidence (20 records from 16 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 40.0 | — | thin_film | — | — | 2010 | T1 | 1004.4751 |
| 39.0 | — | thin_film | — | — | 2010 | T1 | 1004.4751 |
| 38.0 | — | — | resistivity | — | 2009 | T1 | 0903.3515 |
| 38.0 | — | polycrystal | susceptibility, resistivity | — | 2009 | T1 | DOI: 10.1103/PhysRevLett.103.257003 |
| 36.0 | — | single_crystal | susceptibility | — | 2010 | T1 | DOI: 10.1103/PhysRevLett.104.027003 |
| 36.0 | — | thin_film | susceptibility | — | 2010 | T1 | 1004.4751 |
| 32.0 | — | single_crystal | — | — | 2010 | T1 | 1002.2095 |
| 30.0 | — | thin_film | susceptibility | — | 2010 | T1 | 1004.4751 |
| 28.0 | — | single_crystal | susceptibility | — | 2010 | T1 | DOI: 10.1103/PhysRevLett.104.027003 |
| 28.0 | — | — | — | — | 2008 | T1 | 0809.4097 |
| 26.2 | — | single_crystal | resistivity | — | 2010 | — | 0810.3186 |
| — | — | polycrystal | — | — | 2025 | T1 | 2506.08501 |
| — | — | wire | resistivity | — | 2021 | T3 | 2106.10612 |
| — | — | polycrystal | resistivity | — | 2016 | T1 | 1609.09198 |
| — | — | — | — | — | 2013 | T1 | 1308.1040 |
| — | — | single_crystal | — | — | 2013 | T3 | 1311.6213 |
| — | — | polycrystal | resistivity | — | 2013 | T1 | 1302.0482 |
| — | — | wire | resistivity | — | 2011 | T1 | 1103.1701 |
| — | — | single_crystal | resistivity | s-wave | 2008 | T1 | 0812.3605 |
| — | — | single_crystal | resistivity | — | 2008 | T1 | 0807.3137 |
Structure
- Crystal structure
- I4/mmm
- Lattice a (Å)
- 3.914
- Lattice c (Å)
- 13.310
Superconducting parameters
- Hc2
- 155.0 T (0 K)
- λ_eph (e–ph coupling)
- —
Competing orders
- T_SDW
- 85.0 K
Samples & pressure
- Substrate
- Al2O3
- Doping type
- hole