Tc max
93.0 K
Tc ambient
85.0 K
arXiv year
1990
Papers
24
Tc exp.
93.0 K
Tc theo.
—
Evidence
experimental
Tc max measured at polycrystal, susceptibility, DOI: 10.1103/PhysRevB.48.4030, confirmed by 2 papers
Evidence (40 records from 24 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 94.5 | — | polycrystal | susceptibility | — | 1993 | T1 | DOI: 10.1103/PhysRevB.48.4030 |
| 93.0 | — | single_crystal | susceptibility | — | 1995 | T1 | DOI: 10.1103/PhysRevB.52.13013 |
| 93.0 | — | polycrystal | susceptibility | — | 1993 | T1 | DOI: 10.1103/PhysRevB.48.4030 |
| 91.0 | — | polycrystal | susceptibility | — | 1993 | T1 | DOI: 10.1103/PhysRevB.48.4030 |
| 90.0 | — | single_crystal | susceptibility | — | 1991 | T1 | DOI: 10.1103/PhysRevB.43.11496 |
| 89.0 | — | polycrystal | susceptibility | — | 1993 | T1 | DOI: 10.1103/PhysRevB.48.4030 |
| 87.0 | — | polycrystal | susceptibility | — | 2003 | T1 | DOI: 10.1103/PhysRevB.67.052505 |
| 87.0 | — | polycrystal | susceptibility | — | 1993 | T1 | DOI: 10.1103/PhysRevB.48.4030 |
| 86.0 | — | single_crystal | STM | d-wave | 2013 | T1 | 1307.4178 |
| 86.0 | — | single_crystal | — | — | 2007 | T1 | 0708.4336 |
| 86.0 | — | polycrystal | — | — | 1990 | T1 | DOI: 10.1103/PhysRevB.42.301 |
| 85.0 | — | single_crystal | resistivity | — | 1992 | T1 | DOI: 10.1103/PhysRevB.46.11835 |
| 85.0 | — | single_crystal | susceptibility | — | 1991 | T1 | DOI: 10.1103/PhysRevB.43.8729 |
| 85.0 | ambient | single_crystal | susceptibility, STM | unknown | 1991 | T1 | DOI: 10.1103/PhysRevLett.67.2195 |
| 84.0 | — | polycrystal | susceptibility | — | 1997 | T1 | cond-mat/9712113 |
| 84.0 | — | polycrystal | susceptibility | — | 1993 | T1 | DOI: 10.1103/PhysRevB.48.4030 |
| 83.5 | — | polycrystal | susceptibility | — | 1993 | T1 | DOI: 10.1103/PhysRevB.48.4030 |
| 83.0 | — | single_crystal | resistivity | — | 1990 | T1 | DOI: 10.1103/PhysRevLett.65.1941 |
| 81.0 | — | polycrystal | susceptibility | — | 1993 | T1 | DOI: 10.1103/PhysRevB.48.4030 |
| 81.0 | — | single_crystal | resistivity | — | 1990 | T1 | DOI: 10.1103/PhysRevLett.65.1941 |
| 78.8 | — | single_crystal | resistivity | — | 1992 | T1 | DOI: 10.1103/PhysRevB.46.11835 |
| 77.0 | — | thin_film | resistivity | — | 2023 | T1 | 2304.03028 |
| 77.0 | — | polycrystal | resistivity | — | 1998 | T1 | DOI: 10.1103/PhysRevB.57.5055 |
| 76.0 | — | polycrystal | susceptibility | — | 2017 | T1 | DOI: 10.1103/PhysRevMaterials.1.044802 |
| 73.0 | — | thin_film | resistivity | — | 1990 | T1 | DOI: 10.1103/PhysRevB.42.193 |
| 71.0 | — | thin_film | resistivity | — | 2023 | T1 | 2304.03028 |
| 70.0 | — | thin_film | resistivity | — | 2006 | T1 | DOI: 10.1103/PhysRevB.74.054503 |
| 70.0 | — | polycrystal | — | — | 1990 | T1 | DOI: 10.1103/PhysRevB.42.301 |
| 67.0 | — | thin_film | resistivity | — | 1990 | T1 | DOI: 10.1103/PhysRevB.42.193 |
| 66.0 | — | thin_film | resistivity | — | 1990 | T1 | DOI: 10.1103/PhysRevB.42.193 |
| 61.0 | — | thin_film | resistivity | — | 1990 | T1 | DOI: 10.1103/PhysRevB.42.193 |
| 60.0 | — | single_crystal | susceptibility | — | 2007 | T1 | DOI: 10.1103/PhysRevB.76.140506 |
| 60.0 | — | single_crystal | susceptibility | — | 2006 | T2 | cond-mat/0612380 |
| 60.0 | — | single_crystal | susceptibility | — | 1991 | T1 | DOI: 10.1103/PhysRevB.43.8729 |
| 10.8 | — | polycrystal | — | — | 1990 | T1 | DOI: 10.1103/PhysRevB.42.301 |
| — | — | single_crystal | susceptibility | — | 1993 | T1 | DOI: 10.1103/PhysRevB.48.16176 |
| — | — | single_crystal | ARPES | — | 1993 | T1 | DOI: 10.1103/PhysRevLett.71.4051 |
| — | — | single_crystal | susceptibility | — | 1993 | T1 | DOI: 10.1103/PhysRevB.48.4208 |
| — | — | single_crystal | susceptibility | — | 1993 | T1 | DOI: 10.1103/PhysRevB.48.9782 |
| — | — | polycrystal | susceptibility | — | 1992 | T1 | DOI: 10.1103/PhysRevB.46.11439 |
Structure
- Crystal structure
- highly aligned c-axis growth
Superconducting parameters
- Pairing symmetry
- d-wave
- λ_eph (e–ph coupling)
- —
Samples & pressure
- Substrate
- SrTiO3
- Doping type
- hole
- Doping level
- 0.150