Tc max
9.0 K
Tc ambient
—
arXiv year
2025
Papers
2
Tc exp.
9.0 K
Tc theo.
—
Evidence
experimental
Tc max measured at P=13 GPa, single_crystal, resistivity, DOI: 10.1103/dtn4-zd6v
Evidence (5 records from 2 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 9.0 | 13.0 | single_crystal | resistivity | — | 2025 | T1 | DOI: 10.1103/dtn4-zd6v |
| 6.0 | 6.0 | single_crystal | resistivity | — | 2025 | T1 | DOI: 10.1103/dtn4-zd6v |
| 2.5 | 3.0 | single_crystal | resistivity | — | 2025 | T1 | DOI: 10.1103/dtn4-zd6v |
| 2.0 | 3.0 | single_crystal | resistivity | — | 2025 | T1 | DOI: 10.1103/dtn4-zd6v |
| — | — | single_crystal | resistivity | — | 2025 | T1 | DOI: 10.1103/PhysRevB.111.134514 |
Superconducting parameters
- λ_eph (e–ph coupling)
- —
Samples & pressure
- Sample form
- single_crystal
- Substrate
- Si/SiO2